TW281786B - - Google Patents
Info
- Publication number
- TW281786B TW281786B TW083104759A TW83104759A TW281786B TW 281786 B TW281786 B TW 281786B TW 083104759 A TW083104759 A TW 083104759A TW 83104759 A TW83104759 A TW 83104759A TW 281786 B TW281786 B TW 281786B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14700193 | 1993-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW281786B true TW281786B (en]) | 1996-07-21 |
Family
ID=15420338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083104759A TW281786B (en]) | 1993-05-26 | 1994-05-25 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR0180573B1 (en]) |
| CN (4) | CN100501980C (en]) |
| TW (1) | TW281786B (en]) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW451284B (en) | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| DE10217876A1 (de) * | 2002-04-22 | 2003-11-06 | Infineon Technologies Ag | Verfahren zur Herstellung dünner metallhaltiger Schichten mit geringem elektrischen Widerstand |
| CN100347820C (zh) * | 2002-05-22 | 2007-11-07 | 统宝香港控股有限公司 | 有源矩阵显示器件及其制作 |
| JP2004363241A (ja) * | 2003-06-03 | 2004-12-24 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法 |
| KR100514181B1 (ko) | 2003-09-03 | 2005-09-13 | 삼성에스디아이 주식회사 | 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법 |
| CN101140940A (zh) * | 2006-08-18 | 2008-03-12 | 株式会社液晶先端技术开发中心 | 电子装置、显示装置、接口电路和差分放大装置 |
| CN101419986B (zh) * | 2008-12-05 | 2011-05-11 | 北京时代民芯科技有限公司 | 一种防边缘漏电的双边缘抗总剂量辐射加固版图结构 |
| TWI543358B (zh) * | 2014-01-13 | 2016-07-21 | 友達光電股份有限公司 | 顯示面板的畫素 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162224A (en) * | 1979-06-06 | 1980-12-17 | Toshiba Corp | Preparation of semiconductor device |
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| EP0178447B1 (en) * | 1984-10-09 | 1993-02-17 | Fujitsu Limited | A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology |
| JPS61102628A (ja) * | 1984-10-25 | 1986-05-21 | Sony Corp | 液晶表示装置 |
| JP2655865B2 (ja) * | 1988-03-16 | 1997-09-24 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
| JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル，投写型表示装置及びビューファインダー |
| JPH0227320A (ja) * | 1988-07-18 | 1990-01-30 | Hitachi Ltd | 薄膜半導体表示装置とその製造方法 |
| JPH0252419A (ja) * | 1988-08-16 | 1990-02-22 | Sony Corp | 半導体基板の製造方法 |
| US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
-
1994
- 1994-05-25 TW TW083104759A patent/TW281786B/zh not_active IP Right Cessation
- 1994-05-26 KR KR1019940011756A patent/KR0180573B1/ko not_active Expired - Fee Related
- 1994-05-26 CN CNB2006101030033A patent/CN100501980C/zh not_active Expired - Fee Related
- 1994-05-26 CN CNB991202600A patent/CN100379017C/zh not_active Expired - Lifetime
- 1994-05-26 CN CNB991202597A patent/CN100350627C/zh not_active Expired - Lifetime
- 1994-05-26 CN CN94107606A patent/CN1058584C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100501980C (zh) | 2009-06-17 |
| CN1058584C (zh) | 2000-11-15 |
| CN100350627C (zh) | 2007-11-21 |
| KR940027187A (ko) | 1994-12-10 |
| KR0180573B1 (ko) | 1999-03-20 |
| CN1101167A (zh) | 1995-04-05 |
| CN100379017C (zh) | 2008-04-02 |
| CN1258102A (zh) | 2000-06-28 |
| CN1258104A (zh) | 2000-06-28 |
| CN1881568A (zh) | 2006-12-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |